Maximum Ratings
(Single diode, at TA=25°C unless otherwise noted)
Parameter
Symbol
Unit
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Averaged rectified output current
Peak forward surge current @TP=1.0μS
@TP=1.0S
Power dissipation
Thermal resistance, junction to ambient
Storage temperature
V
oltage: 80 Volts
Current: 250 mA
RoHS Device
Dimensions
in
inches
and
(millimeter)
Features
-Fast switching speed.
-For general purpose switching applications.
-High conductance.
Mechanical data
-Case: SOT
-523, molded plastic.
-T
erminals: Solder plated, solderable per MIL-STD-
202E, method 208C.
-W
eight: 0.002 grams approx.
Circuit Diagram
CDSH3-4448/A/C/S-G
Page 1
QW-B0038
SMD Switching Diodes
REV:A
Comchip Technology CO., LTD.
0.067(1.70)
0.059(1.50)
0.033(0.85)
0.030(0.75)
0.043(1.10)
0.035(0.90)
1
2
3
0.008(0.20)
0.004(0.10)
0.069(1.75)
0.057(1.45)
0.004(0.10)min.
0.004(0.10)max.
0.031(0.80)
0.024(0.60)
0.012(0.30)
0.006(0.15)
Value
1
2
3
1
2
3
1
2
3
1
2
3
CDSH3-4448-G
Marking: A3
CDSH3-4448A-G
Marking: A6
CDSH3-4448C-G
Marking: A7
CDSH3-4448S-G
Marking: AB
Electrical Characteristics
(Single diode, at TA=25°C unless otherwise noted)
Parameter
Symbol
Unit
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Conditions
Max.
VBR
VF1
VF2
VF3
VF4
IR1
IR2
CT
Trr
IR=2.5μA
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=70V
VR=20V
VR=6V, f=1MHz
VR=6V, IF=5mA
Min.
Typ.
80
0.62
0.72
0.855
1.0
1.25
0.1
25
3.5
4
V
V
V
V
V
μA
nA
pF
nS
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
PD
RθJA
TSTG
100
80
57
500
250
4.0
2.0
150
833
-65 to +150
V
V
V
mA
mA
A
mW
O
C/W
OC
SOT-523
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